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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N04VUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP90N04VUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP90N04VUG-E1-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP90N04VUG-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZP) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Channel temperature 175 degree rated
? Super low on-state resistance
R DS(on) = 4.0 m Ω MAX. (V GS = 10 V, I D = 45 A)
? High current rating
I D(DC) = ± 90 A
? Low input capacitance
C iss = 5000 pF TYP.
? Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
40
± 20
± 90
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 300
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
105
1.2
175
? 55 to + 175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
37
137
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150 ° C, R G = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
1.43
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19545EJ1V0DS00 (1st edition)
Date Published November 2008 NS
Printed in Japan
2008
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功能描述:MOSFET N-CH 55V 90A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件